CHARACTERISTICS OF MOSFETS FABRICATED IN LASER RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATELAM HW; TASCH AF JR; HOLLOWAY TC et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 206-208; BIBL. 3 REF.Article

DRAM DESIGN USING THE TAPER-ISOLATED DYNAMIC RAM CELLLEISS JE; CHATTERJEE PK; HOLLOWAY TC et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 707-714; BIBL. 20 REF.Article

DRAM DESIGN USING THE TAPER-ISOLATED DYNAMIC RAM CELLLEISS JE; CHATTERJEE PK; HOLLOWAY TC et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 337-344; BIBL. 20 REF.Article

THE HI-C RAM CELL CONCEPTTASCH AF JR; CHATTERJEE PK; FU HS et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 1; PP. 33-41; BIBL. 22 REF.Article

THE IMPACT OF SCALING LAWS ON THE CHOICE OF N-CHANNEL OR P-CHANNEL FOR MOS VLSICHATTERJEE PK; HUNTER WR; HOLLOWAY TC et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 220-223; BIBL. 15 REF.Article

CHARGE CAPACITY ANALYSIS OF THE CHARGE-COUPLED RAM CELL.TASCH AF JR; HORNG SEN FU; HOLLOWAY TC et al.1976; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 5; PP. 575-585; BIBL. 11 REF.Article

SILICON-ON-INSULATOR M.O.S.F.E.T.S. FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO₂TASCH AF JR; HOLLOWAY TC; LEE KF et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 14; PP. 435-437; BIBL. 6 REF.Article

ENHANCED CAPACITY CCDCHATTERJEE PK; TASCH AF JR; FU HS et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1374-1382; BIBL. 6 REF.Article

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RING OSCILLATORS FABRICATED IN LASER-ANNEALED SILICON-ON-INSULATORLAM HW; TASCH AF JR; HOLLOWAY TC et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 99-100; BIBL. 4 REF.Article

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K-SHELL X-RAY PRODUCTION CROSS SECTIONS FOR ¹²C, ¹⁴N, AND ¹⁶O IONS ON NI, RB, AG, AND SB: 0.4-2.4 MEV/AMU.GRAY JJ; RICHARD P; KAUFFMAN RL et al.1976; PHYS. REV., A; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 1344-1351; BIBL. 17 REF.Article